Gallium Arsenide (GaAs)

     Gallium arsenide is a crystalline semiconductor material widely used in infrared optics, microelectronics and optoelectronics. OIptoelectronics often uses dopted crystalline gallium arsenide where various impurities embedded in the crystal lattice. The properties of a doped gallium arsenide GaAs depend on interaction of the doping agent with the intrinsic defects of the crystal. Dopted Gallium arsenide GaAs used for in LEDs, photocatodes, laser diodes, etc. Non-doped semi-insulating gallium arsenide is primarily used in microelectronics, and exclusively for infrared optics.
     Gallium arsenide GaAs can be grown by Liquid Encapsulated Czochralski (LEC) technology, Float Zone (FZ) method, Vertical Gradient Freeze (VGF) and Horizontal Gradient Freeze (HGF) technology.
    Wide working spectr region allows gallium arsenide to be used as an alternative to zinc selenide for laser optics of low power CO2 lasers. Non-doped semi-insulating GaAs is a good material for IR lenses, windows, and beamsplitters. Gallium arsenide GaAs crystals can be used in therahertz photonics as THz radiation generators, due to their nonlinear optic properties.

Novotech supplies gallium arsenide GaAs blanks, windows and wafers. Custom sizes and shapes are available.

Physical and mechanical properties of Gallium Arsenide GaAs

Gallium Arsenide GaAs transmission
at 0.8-2 um spectral region (W/S thickness 1.5 mm)

Gallium Arsenide GaAs transmission
at 2-22 um spectral
region (W/S thickness 1.5 mm)

Gallium Arsenide GaAs transmission
at IR and TGz spectral
region (W/S thickness 5 mm)

Refractive index of Gallium Arsenide (GaAs)

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